By Michael Orshansky
Layout for Manufacturability and Statistical layout: A complete technique provides a complete evaluate of equipment that must be mastered in realizing cutting-edge layout for manufacturability and statistical layout methodologies. widely, layout for manufacturability is a suite of concepts that try and repair the systematic resources of variability, corresponding to these as a result of photolithography and CMP. Statistical layout, however, bargains with the random resources of variability. either paradigms function inside of a typical framework, and their joint accomplished remedy is likely one of the goals of this ebook and an incredible differentation.
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Additional resources for Design for Manufacturability and Statistical Design: A Constructive Approach (Integrated Circuits and Systems)
Fig. 7. (a) Topography after plating, illustrating array area bulges and recess, as well as both positive and negative step heights above plated lines resulting from superﬁll plating processes. (b) Topography after CMP, where the degree of dishing and erosion in the ﬁnal post-CMP surface can be strongly inﬂuenced by the incoming proﬁle that the CMP process experiences. 4 MULTILEVEL COPPER INTERCONNECT VARIATION The pattern dependent variations described above, arising from copper plating and CMP, can be exacerbated in multilevel interconnect structures.
First, a protective layer of oxide and a layer of thicker nitride on the surface of silicon are deposited. An isolation mask is used to deﬁne the trenches. The nitride is patterned and anisotropically etched into the silicon substrate, producing a trench with sharp vertical walls. A reactive ion etch (RIE) is used to etch the silicon trenches. The trench is then ﬁlled with oxide producing an isolation between the neighboring devices. Now, however, the oxide has to be removed so that oxide forming the STI and the silicon of active areas are co-planar .
Reprinted from , c 2003 SPIE). designer’s perspective, the variation of etching bias as a function of layout pattern density is the most important component. This dependence can be classiﬁed into three classes: micro- and macro-loading, and aspect-ratio-dependent etching. In aspect-ratio-dependent etching, the variation of linewidth is dependent on the distance to nearby features . The biases due to photolithography and etching processes are additive. Micro-loading and macro-loading are driven by the common physical mechanism.