By R. G. Rhodes, Heinz K. Henisch
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Extra info for Imperfections and Active Centres in Semiconductors
Dislocations with a large value of b would, therefore, be theoretically unstable and hence would tend to dissociate into dislocations of lower energy. If the particular reaction b 3 -> b x + b 2 is considered, the self energies of the corresponding dislocations are (b^ 2 , | b 2 | 2 and |b 3 | 2 . If [b^ 2 + + |Ь 2 | 2 < |Ь 3 | 2 , there is a gain of energy and dissociation is probable; it becomes increasingly so the greater this energy difference. ) lattice can lower their energies by a reaction of the type fl/2 + я/2[0П] =fl/2[lT0] In these reactions it must be taken into account that the energy of the edge dislocation is greater by a factor of 1/(1 — v) ~ 3/2 than the energy of a screw dislocation where v is Poisson's ratio (Bollmann, 1962:5).
Lattice . . ABC ABCAB . , there are double layers at each of these positions, as evident by reference to Fig. 2. The (111) planes, labelled ABC, lie directly below the planes a fly in the  direction. /3, Cy, etc. are widely spaced, while those pairs, CL6, J8C, yA, etc. have a much closer spacing of only -|- of this. c. lattice a stacking fault can be created either by the removal or the insertion of a double layer of atoms with the formation of an intrinsic or extrinsic translation-twin, respectively.
This can be understood by considering the diagram in Fig. 3 in which the (111) planes are 50 IMPERFECTIONS AND ACTIVE CENTRES IN SEMICONDUCTORS indicated by lines. The stacking order . . ABCABC . . is normal except in the centre where part of the A plane is missing. At each end of this faulted region an edge dislocation, with a Burgers vector a/3[\ 11], is formed extending normal to the plane of the figure. e. by the transport of atoms by diffusion to or from the edge of the incomplete atomic plane.