ISTFA 2009 00 : onference proceedings from the 35th - download pdf or read online

Read Online or Download ISTFA 2009 00 : onference proceedings from the 35th International Symposium for Testing and Failure Analysis, November 14-19, 2009, San Jose McEnery Convention Center, San Jose, California, USA PDF

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Extra resources for ISTFA 2009 00 : onference proceedings from the 35th International Symposium for Testing and Failure Analysis, November 14-19, 2009, San Jose McEnery Convention Center, San Jose, California, USA

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The (1st–2nd) PBLT/PBLB currents are calculated as the SNT-to-VSSA and SNB-to-VSSA leakages, respectively. The storage node to VDDA leakages, storage node to VNWA leakages, and storage node to storage node leakages are similarly measured. 6V) Figure 4: Schematic illustration of the DBLM bias conditions for measuring BL to WL leakages. 2V) BLT SNB PBLT (0V) PBLB (0V) PBLB (0V) Figure 3: Schematic illustration of the DBLM bias conditions for measuring storage node to VSSA leakages. Figure 5: Schematic illustration of the DBLM bias conditions for measuring storage node to WL leakages.

Gorugunthu , Tom Crawford et al, Tahir Cedar, “Spray Cooling for time Resolved Emission Measurements of ICs, Proc. 30th ISTFA (2004) pp. 18 [6] R. Schlangen, R. Leihkauf, U. Kerst, C. Boit, ”Functional Analysis Through Chip Backside with Nano Scale Resolution”, Proc. 32nd ISTFA (2006) pp. 376 [7] R. Schlangen, R. Leihkauf, U. Kerst, C. Boit, K. Wilsher, T. , " Backside E-Beam Probing on Nano Scale Devices" Proc. IEEE ITC (2007) pp. 2 1-9 [8] R. Jain. T. Malik, T. Lundquist, R. , "Novel Flip-Chip Probing Methodology Using Electron Beam Probing" Proc.

Boit “Contact to Contacts or Silicide by use of Backside FIB Circuit Edit allowing to approach every Active Circuit Node”Proc. 17th ESREF (2006) pp. 1498 [12] R. Schlangen, U. Kerst, C. Boit, S. Schömann, B. Krüger, T. , “FIB Backside Circuit Modification on Device Level Allowing to Access Every Circuit Node with Minimum Impact on Device Performance by Use of Atomic Force Probing”, Proc. 33rd ISTFA (2007), pp. 34-40 [13] A. Wei, M. Sherony, S. Antoniadis, "Effect of Floating Body Charge on SOI MOSFET Design", Transactions on Electron Devices, Vol.

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