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Extra resources for ISTFA 2009 00 : onference proceedings from the 35th International Symposium for Testing and Failure Analysis, November 14-19, 2009, San Jose McEnery Convention Center, San Jose, California, USA
The (1st–2nd) PBLT/PBLB currents are calculated as the SNT-to-VSSA and SNB-to-VSSA leakages, respectively. The storage node to VDDA leakages, storage node to VNWA leakages, and storage node to storage node leakages are similarly measured. 6V) Figure 4: Schematic illustration of the DBLM bias conditions for measuring BL to WL leakages. 2V) BLT SNB PBLT (0V) PBLB (0V) PBLB (0V) Figure 3: Schematic illustration of the DBLM bias conditions for measuring storage node to VSSA leakages. Figure 5: Schematic illustration of the DBLM bias conditions for measuring storage node to WL leakages.
Gorugunthu , Tom Crawford et al, Tahir Cedar, “Spray Cooling for time Resolved Emission Measurements of ICs, Proc. 30th ISTFA (2004) pp. 18  R. Schlangen, R. Leihkauf, U. Kerst, C. Boit, ”Functional Analysis Through Chip Backside with Nano Scale Resolution”, Proc. 32nd ISTFA (2006) pp. 376  R. Schlangen, R. Leihkauf, U. Kerst, C. Boit, K. Wilsher, T. , " Backside E-Beam Probing on Nano Scale Devices" Proc. IEEE ITC (2007) pp. 2 1-9  R. Jain. T. Malik, T. Lundquist, R. , "Novel Flip-Chip Probing Methodology Using Electron Beam Probing" Proc.
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